BYV34G-600_1
? NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 25 February 2009 4 of 9
NXP Semiconductors
BYV34G-600
Dual recti?er diode, ultrafast
6. Characteristics
Table 5. Characteristics
Tj
= 25
°C unless otherwise speci?ed.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
VF
forward voltage IF
= 10 A; Tj
= 150
°C; see
Figure
2
- 0.92 1.16 V
IF
= 20 A - 1.07 1.48 V
IR
reverse current VR
= 600 V - 10 50
μA
VR
= 600 V; Tj
= 100
°C - 0.2 0.6 mA
Dynamic characteristics
Qr
recovered charge IF
=2AtoVR
=30V;dIF/dt=20A/μs;
seeFigure3
- 4070nC
trr
reverse recovery time IF
= 1 A to VR
=30V;
dIF/dt = 100 A/μs; ramp recovery;
see
Figure
3
- 5060ns
IRM
peak reverse recovery
current
IF
= 10 A to VR
=30V;
dIF/dt=50A/μs; Tj= 100°C;
seeFigure3
- 35A
VFR
forward recovery
voltage
IF
= 10 A; dIF/dt=10A/μs;
seeFigure4
- 3.2 - V
(1) Tj= 150°C; typical values
(2) Tj= 150°C; maximum values
(3) Tj=25°C; maximum values
Fig 2. Forward current as a function of forward voltage
003aab485
0
0 0.4 0.8 1.2 1.6V
F
(V)
5
10
15
20
25
30
IF
(A)
(1)
(2)
(3)
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